Abstract
The exchange bias field (Hex) and tunneling magnetoresistance (TMR) ratio play an important role for the applications of magnetic tunnel junction (MTJ) in spintronic devices. Here the structure, magnetic properties, and TMR ratio are systematically investigated for the IrMn-based MTJ (IrMn/CoFe/Ru/CoFe/CoFeB/MgO/CoFeB) with seed layers of Ta, Ta/Ru, NiFeCr and Ta/NiFe. The MTJs with seed layers of Ta/Ru and Ta/NiFe present high Hex values, and the MTJ with seed layer of Ta/Ru shows the highest TMR ratio. We found that the Hex is positively correlated with the (111) texture quality of the IrMn layer while the interdiffusion at the interfaces of CoFeB/MgO/CoFeB has significant impact on the TMR ratio. These results highlight the crucial role of seed layers on the Hex and TMR ratio, and suggest that the Ta/Ru seed layer is beneficial to developing MTJ-based spintronic devices such as magnetic field sensor towards high sensitivity and high stability.
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