Abstract
The present work explores the impact of scattering in carrier transport of near-ballistic SiNW MOSFET. For the first time, a scattered SiNW MOSFET model is revealed which includes the effects of optical phonon emission, elastic scattering, surface roughness scattering and random discrete dopants. Impact of above mentioned combined scatterings in the device limits electron mobility which makes a remarkable decrease in device current and transconductance compared with our previous model and Natori's Ballistic transport model. This work discusses the detailed behavior of analog parameters like Transconductance (g(m)), Transconductance generation factor (g(m)/I(d)) and Early Voltage (VA). The proposed model has been validated by comparing the analytical results with the TCAD simulation results and it shows the good agreement.
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