Abstract
Present research work reports the systematic investigation of thermal and electrical characterizations of Ge20Sn10Se70-xSbx (x = 0, 3, 6, 9, 12, 15) glass system to probe the structural modifications. Bulk samples are prepared using melt quenching technique. Differential scanning calorimetric technique (DSC) is used at the constant heating rate of 100C under nonisothermal conditions. Different kinetic parameters viz. glass transition temperature Tg, Hruby parameter Hr, crystallization temperature Tc, etc., have been calculated. Glasses under study shows good thermal stability, hence, can find practical applications especially in optical fiber technology. Further, in the current study, an attempt has been made to observe the variation in conductivity with respect to the increase in temperature for amorphous Ge20Sn10Se70-xSbx (x = 0, 3, 6, 9, 12, 15) using two probe method and hence the band structure and corresponding conduction mechanism is studied.
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