Abstract
A band anticrossing (BAC) k.p model was applied to calculate the valence band structure of wurtzite GaN1−xSbx dilute alloys. BAC parameters such as localized Sb-impurity energy level and coupling parameter were determined by using experimental results. The restructuring of the valence band is found as a result of the interaction of the Sb-related impurity state with the extended states of the valence band of the host GaN. The dependencies of the energy band gap and effective masses of different energy sub-bands of GaN1−xSbx on Sb content are investigated. Results predict a large band gap reduction with the incorporation of dilute amounts of Sb, which is a key parameter for device design. Analysis of carrier effective masses show that changes in Sb content and their effects can affect the transport properties of GaNSb alloys.
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