Abstract
We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2 eV (1.1 eV) effective band gaps of InGaAs(Sb)N alloys. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed. We discuss the relative influences of strain-induced splitting of the valence band and the incorporation of Sb on the band gaps and band offsets at InGaAsN/GaAs and InGaAsSbN/GaAs interfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
