Abstract
Abstract The possibilities of employing InAs sub-mono layer (SML) quantum dots (QD) as long wavelength sources and infrared photodetectors have been explored in this work. To accomplish this, various heterostructures based on InAs SML QDs capped with GaAs1-xSbx were studied. The effects of Sb accumulation on the top of QDs were explored and their influences on the optical properties were duly explained. Two opposing phenomena, viz. Reduction in conduction band offset and increase in hydrostatic strain, with higher concentration of Sb accumulation were observed. This had a net effect of red-shift in the photoluminescence emission. In addition, the number of QD layers was varied from 2 to 8 layers. The SML QD structure with optimum number of layers facilitated photoluminescence wavelength close to 1300 nm, which is suitable for telecommunication applications. In addition, the possibilities of these SML QDs to be used as photodetectors in the long wavelength infrared (LWIR) and far infrared (FIR) regions have been portrayed.
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