Abstract
Influences of inclination angle and rotation on etching characteristics are investigated. Inclination and rotation are two of the advantages of the ion‐beam etching method, therefore their influence is studied with particular interest. Experiments are carried out to examine the relation of sample inclination angle to the sputtering yield, etching rate, and etching factor of an etched cross section. The influence of the sample inclination angle on the etching factor is also studied. In addition, it is found that in the case of the ion‐beam etching method, the desired etched cross section can be obtained by controlling the sample inclination angle. This etching characteristic is due mainly to the ion‐restriction effect of the mask material and the horizontal etching rate characteristic to the substrate.
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