Abstract
Zn2In2O5 films were reactively deposited with assistance of rf discharge in the oxygen pressure of 3×10-2 Pa and at substrate temperatures of room temperature and 320°C. The applied rf power was varied from 0-450W. The influence of the rf power on the film structure and the physical properties was studied. At 320°C, crystallized films could be deposited at and above 100W, while at 25°C, the films were crystallized above 300W. The crystallized films deposited at 320°C and at 100-250W exhibited the highest electrical conductance with the resistivity of below 10-3Ωcm and the excellent light transmittance of averagely 85% in the visible light range. The optical band gap for the films was determined. The value was in the range of 3.42-3.58eV.
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