Abstract
The electrical and structural properties of hydrogenated amorphous silicon germanium alloys prepared by the rf glow discharge method have been measured as a function of the rf power and the gas flow rate. The photoconductivity of a-Si1-xGex:H films increases by a factor of 103 at x=0.45 with increasing rf power density, and the microstructure of the films changes from heterogeneous to homogeneous. This paper discusses the deposition mechanism inducing these results.
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