Abstract
The influence of trace residual gases on the film specularity, grain size, and resistivity of aluminum–1.5% silicon alloy was investigated. Oxygen and nitrogen are shown to be the major contributors to loss of film specularity. The reflectance is decreased from ca. 90% to 10%–20% when oxygen or nitrogen are present in the sputtering system at about 5×10−3 Pa above the vacuum system residual pressure (8×10−5 Pa in this case). Hydrogen is shown to have no significant effect on reflectance at this level of contamination. The resultant grain size variations show only small changes when correlated with each contaminant. However, there appears to be a separate, crystalline phase which appears with hydrogen and nitrogen. Additionally, film analysis by nuclear reaction techniques shows some direct correlation between loss of reflectance and carbon content. The results are discussed with regard to microelectronic device processing.
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