Abstract
The influence of silica crucible reaction with graphite susceptor on carbon and oxygen impurities in multicrystalline silicon was studied by global numerical simulations. Results showed that the crucible reaction has a marked effect on carbon and oxygen impurities in the crystal. When the activity of carbon on the surface of the graphite susceptor increases, both oxygen and carbon impurities in the melt increase rapidly. Therefore, the production of high-purity multicrystalline silicon requires setting a free space between the silica crucible and the graphite susceptor or depositing a layer of SiC film on the surface of susceptor to prevent reaction between them.
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