Abstract
In this paper impact of two major statistical variability sources Random Dopant Fluctuation (RDF) and Metal Gate Granularity (MGG) on the performance of FinFET, inserted oxide FinFET (iFinFET), and Stacked NanowireFET (SNWFET) is studied and compared using numerical simulations for the same footprint on the wafer. SNWFET and iFinFET show superior immunity toward variability than FinFET because of larger effective width and separated channels from bulk. The conventional controlled channel doping on Punch-Through-Stopper (PTS) doped substrate enhances influence of RDF due to the intrusion of dopants from PTS doping into the channel during the annealing process. Using Super-Steep-Retrograde (SSR) doping profile which is achieved by Oxygen-Insertion (OI) method dopant intrusion from bulk can be reduced, along with this lightly doped channel achieves almost 80% improvement in RDF variability. The SNWFET and iFinFET shows 25% and 17% lower MGG induced threshold voltage (VTH) variability than FinFET because of larger effective gate area. As iFinFET shows almost equal variability with better delay performance than SNWFET it can be a better option at 7 nm technology.
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