Abstract
Planar, Be-implanted p-n junctions were fabricated in GaAs with rapid thermal annealing (RTA). Five second isochronal anneals over a temperature range of 600–1000 °C were studied with secondary ion mass spectrometry (SIMS), sheet resistance measurements, and variable diameter p-n junctions. Sheet resistance measurements indicate that a minimum RTA temperature of 600 °C is necessary for electrical activation of the implanted Be. SIMS analysis indicates that significant outdiffusion and surface evaporation of Be occur at all RTA temperatures in this range, while indiffusion of Be is insignificant for concentrations below 1×1018 cm−3. Forward bias current in diodes ranging in diameter from 10 to 1000 μm is dominated by surface recombination, rather than bulk space-charge recombination, over the entire 600–1000 °C temperature range. The magnitude of the surface recombination current is insensitive to the RTA temperature, which suggests that 600 °C RTA should be sufficient for the formation of satisfactory p-n junctions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
