Abstract
We have studied the effect of the post-growth rapid thermal annealing on optical and electrical properties of InAs/InAlAs/InP quantum wires with various InAs deposited thickness. Quite different annealing behaviors in photoluminescence and dark resistance are observed, which can be attributed to dislocations in samples. After annealing at 800 °C, quantum wires still exist in the sample with two monolayer InAs deposited thickness, but the temperature-dependent PL properties are changed greatly due to the intermixing of In/Al atoms.
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