Abstract
The dependence of the crystalline structure on crystallization temperature, argon pressure, and rf power have been investigated in detail. Three ranges of annealing temperature were found. In the first and second ones, the film structures are, respectively, amorphous and perfectly polycrystalline, while in the last case an evolution to a textured state occurs. It has been observed that although for large rf power the formation of spurious phases is observed, there is only a small change in the overall composition of the films. On the contrary, for different values of the argon pressure only the garnet phase is observed, but with large stoichiometry changes.
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