Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

Abstract

Silicon diodes with a p+-n junction irradiated with 3.5-MeV electrons (the fluence ranged from 1015 to 4 × 1016 cm−2) have been studied. It is established that the dependence of the tangent of the angle of electrical losses tanδ on the frequency f of alternating current in the range f = 102−106 Hz is a nonmonotonic function with two extrema: a minimum and a maximum. Transformation of the dependences tanδ(f) as the electron fluence and annealing temperature are increased is caused by a variation in the resistance of n-Si (the base region of the diodes) as a result of accumulation (as the fluence is increased) or disappearance and reconfiguration (in the course of annealing) of radiation defects. The role of time lag of the defect recharging in the formation of tanδ(f) is insignificant.