Abstract
We developed a theoretical model of an electron conductivity of a nanolayer in the view of quantum theory of transport phenomena. The layer thickness can be comparable to or less than the de Broglie wavelength of charge carriers. We suppose an isoenergy surface has a form of an ellipsoid of revolution. We derived analytical expressions for integral conductivity tensor components as functions of the non-dimensional layer thickness, chemical potential, ellipticity parameter and surface roughness parameters. The dependences of longitudinal and transverse conductivity tensor components on the above parameters were analyzed. We compared the results obtained for a metal and semiconductor. The comparison between theoretical calculations and experimental data for bismuth and silicon films was made.
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