Abstract
In the work, the effect of In0.8Ga0.2As quantum dots position in the i-region of a GaAs solar cell on its spectral and photoelectric characteristics has been investigated. Three solar cell structures were obtained by metal-organic vapor-phase epitaxy, in which layers of quantum dots were placed in the middle of the i-region and also have been shifted to the base and the emitter. As a result, it has been shown that the solar cell with a quantum dot array shifted to the base demonstrates the smallest open-circuit voltage drop and, accordingly, a higher efficiency value.
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