Abstract
The influence of pulsed laser treatment mode parameters on ablation and modification processes of Si3N4‒ТiС ceramics is determined. Using the revealed interrelations a mode of pulsed laser processing after diamond grinding of Si3N4‒TiC ceramic parts is established and recommended for practical use, which ensures the defective layer removal and defectfree structure formation in the surface layer. Ill. 5. Ref. 31.
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