Abstract
AbstractCopper deficient p‐type conducting CuInSe2 single crystals were implanted with 40 keV protons in the fluence range from 2.5 · 1014 to 1.5 · 1016 cm−2. Over the whole fluence range the implanted layers were n‐type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100 °C.
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