Abstract
The formation of cobalt silicide by the reaction of a Co layer with a Si substrate is known to be sensitive to the presence of oxygen contamination in the reaction region. A layer of Ti deposited on top of the Co is known to getter oxygen impurities. However, the presence of a Ti capping layer induces two additional effects: firstly, the nucleation temperature of CoSi 2 is increased by 60–80 °C. Secondly, the CoSi 2 that is formed in the presence of a Ti capping layer has a preferential (2 2 0) and (4 0 0) orientation. A detailed study is presented on the influence of several processing parameters (annealing temperature, selective etching, layer thickness) on the nucleation temperature and preferential orientation of CoSi 2 in the Ti/Co/Si system.
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