Abstract
The carbon nitride (CN x ) films have been prepared by infrared (IR; at 10.6 μm) and ultraviolet (at 248 nm) laser induced chemical vapour deposition (CVD) using different ethylene/nitrous oxide/ammonia mixtures. The partial concentration of ammonia in mixtures was varied in order to obtain a higher nitrogen incorporation in the deposited films. The changes induced in the gas-phase composition by the laser radiation in different experimental conditions were determined by IR transmission measurements. The film composition was studied by X-ray photoelectron spectroscopy. The modification of the film chemical composition, specifically the dependence of the N C ratio, on the irradiation wavelength and on the reactants composition is described for the first time.
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