Abstract
Electrically conductive nitrogen‐doped hydrogenated carbon films (a‐C:H:N) were deposited using a nitrogenacetylene gas mixture by plasma‐assisted chemical vapor deposition (PACVD). A capacitively coupled plasma beam source was used for the depositions. The plasma is excited by a radio‐frequency (RF) discharge and confined by Helmholtz magnetic coils, resulting in an increase in plasma density. The ion energy, as well as the deposition rate, can be controlled by the choice of the size of the coupling electrode, i.e. the ratio of cathode-to‐anode area, the electric current at the Helmholtz magnet coils, the total gas pressure and the RF power. The interdependence of these process parameters on the ion energy and the deposition rate has been studied in detail in this work. Hardness and electrical resistivity were measured on the deposited a‐C:H:N films.
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