Abstract
The effect of high temperature (up to 1120 ° C)—high pressure (up to 1.1 GPa) treatment mr tle resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic dispalacement due to defects were determined for various Laue reflections. Well-defined development of the cluster like defect structure after high temperatnre pressurization depending to a substantial extent mi the preannealing conditions was observed. PACS numbers: 61.70.-r, 81.40.-z
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