Abstract
Microcrystalline silicon films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of power on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the power, the crystallinity increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89eV to 1.75eV with the microwave power ranging from 400 W to 650W.
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