Abstract

Li-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering. The influence of post-annealing temperature on the electrical, structural, and optical properties of the films was investigated. A conversion from p-type conduction to n-type in a range of temperature was confirmed by Hall measurement. The optimal p-type conduction is achieved at the annealing temperature of 500 °C with a resistivity of 57 Ω cm, carrier concentration of 1.07 × 10 17 cm −3 and Hall mobility of 1.03 cm 2 V −1 s −1. From the temperature-dependent PL analysis, the energy level of Li Zn acceptor was determined to be ∼140 meV above the valence band.

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