Abstract
AbstractThree kinds of different Zn:Fe:LiNbO3 wafers are prepared by proper reduction or oxidation post‐treatment processes. The optical‐damage‐resistance abilities and photorefractive properties are studied using the optical compensator technique and two‐wave coupling measurement, respectively. The holographic storage properties, that is, diffraction efficiency, writing time, erasure time, photorefractive sensitivity, and dynamic range, are also measured or calculated. The analyses indicate that the sample disposed by reduction is the most proper media for holographic storage application. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 986–988, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21542
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