Abstract
Abstract Sb2S3 is a potential material for solar cells because of the suitable optoelectronic properties as well as earth-abundant constituent elements. Post-deposition annealing treatment is a crucial step in the fabrication of high-quality crystalline Sb2S3 thin films. Herein, we analyzed the impact of annealing temperature on grain growth and morphology of Sb2S3 films by annealing them in an Ar atmosphere for 30 min. The as-grown Sb2S3 films were amorphous. On annealing the films at 250–350 ∘ C, crystallization of orthorhombic Sb2S3 occurred and its crystal size increased from 43 to 100nm. The surface morphology and grain growth were improved at an annealing temperature of 300 ∘ C when compared with those at temperatures 250 ∘ C and 350 ∘ C. The annealed Sb2S3 films exhibited direct energy gap values of 1.6–1.7 eV. The films exhibited p-type electrical conductivity. The electrical resistivity of the films decreases and hole mobility increases with increasing annealing temperature from 250 to 350 ∘ C. This study is vital for the optimization of the annealing temperature for growth of good-quality Sb2S3 films, which are necessary for solar cell applications.
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