Abstract
Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H2O and O2.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0773-y) contains supplementary material, which is available to authorized users.
Highlights
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (MoS2, MoSe2, WS2, etc.), are widely used recently for fabricating nextgeneration nanoelectronics [1,2,3,4,5,6,7,8,9,10]
Graphene has a fundamental disadvantage for electronic devices, which is the lack of an intrinsic band gap
The thickness of the MoS2 channel measured by atomic force microscopy (AFM) was 11 nm
Summary
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (MoS2, MoSe2, WS2, etc.), are widely used recently for fabricating nextgeneration nanoelectronics [1,2,3,4,5,6,7,8,9,10]. This is because of the high electron mobility of 2D materials, compared with the original bulk material. MoS2 FETs have in general recorded an on/off current ratio of 105 ~ 1010 [21,22,23,24,25,26,27,28], and some MoS2 FETs with high-k dielectrics
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