Abstract
During plasma processing, low-k dielectrics are exposed to high levels of vacuum ultraviolet (VUV) radiation emitted from the plasma. The porous structure of these materials makes them more sensitive to modification because of their low density and consequently deep penetration of active species into the film. Here, we investigate the changes to electrical properties of porous low-k dielectrics as a function of porosity after VUV irradiation. Organosilicate low-k films of porosities between 30% and 50% were exposed to synchrotron VUV radiation at 8 eV with a fluence of approximately 5 × 1014 photons/cm2. Capacitance-voltage measurements showed an increase in the dielectric constant along with a flat-band voltage shift. FTIR results show methyl depletion as well as water uptake after VUV treatment. These show that deterioration of the electrical properties after VUV exposure and the degree of damage are found to be higher for the more porous films.
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