Influence of Polar Groups and Metal Salts on the Residual Currents of Semiconductor Devices Covered with Polyimides

Abstract

The residual currents of a modified field effect transistor, covered with polyimides containing amido, imino, and carboxylic acid groups, were measured in order to clarify the phenomena causing increased residual currents when larger amounts of unreacted amidic acid groups remain in the coating polyimide layer. Alkoxysilane agents containing imino and amino groups were coated on the transistor surface in order to evaluate effects of these groups on the current. Influence of alkali and transition metal ions, contained as impurities, on the residual current was analyzed by addition of metal salts to the polyimide. Effects of both metal ions on the residual current were compared with those of polar groups such as amido, imino, amino, carboxylic acid, and amidic acid groups in the polyimides.