Abstract
The temperature-dependent electrical conductivity and dielectric permittivity and room-temperature optical absorption spectra of La3Ga5SiO14 (langasite) crystals grown under different conditions are measured. The resistivity and peak-loss temperature t tanδ of the crystals are shown to be determined by the concentration of oxygen vacancies, which originate from changes in melt composition during crystal growth. The t tanδ of langasite is shown for the first time to be anisotropic (measurements on Z- and X-cuts). The properties of the crystals are suitable for the fabrication of stable piezoelectric elements capable of operating above 600°C.
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