Abstract
This article presents the results of theoretical and experimental studies of the influence of plasma waves on the photoacoustic signals of Si samples. The aim of these investigations was to find and examine the sensitive measurement configurations and the configurations of the sample in the photoacoustic cell for detection and measurement of the lifetime of excess carriers. Two measurement configurations were examined: transmission and phase lag and two configurations of the sample in the photoacoustic cell. This article demonstrates that both configurations for samples with differently prepared surfaces are effective for observation and detection of plasma waves with the photoacoustic method.
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