Abstract
The work is devoted to studying the influence of an additional step of argon plasma treatment on the quality of the GaP/n-Si isotype heterojunction grown by plasma-enhanced atomic-layer deposition (PE-ALD). Deep-level transient spectroscopy measurements demonstrated that argon plasma leads to the formation of defects with a high concentration in silicon wafers, unlike the PE-ALD mode without a step of hydrogen or argon plasma treatment. In addition, GaP layers obtained by PE-ALD have defects with an activation energy of 0.40 eV and 0.62 eV for processes with and without argon plasma treatment, respectively.
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