Influence of piezoelectric phonons on the magneto optical transition linewidth in GaN and GaAs

Abstract

We compare piezoelectric phonon scattering mechanism with optical phonon one in both Gallium arsenide (GaAs) and Gallium nitride (GaN) materials of a quantum well through the their contribution to the magneto-optical transition linewidths (MOTLWs). Applying the projection-operator and the profile methods to compute the magneto-optical conductivity tensor (MOCT), magneto-optical absorption power (MOAP), and MOTLWs. Numerical calculation results show that the MOTLWs increase as the temperatures and the magnetic fields increase, but decrease as the electron density and the well width increase for both GaN and GaAs materials. In particular, the MOTLWs due to piezoelectric phonons vary sharper and have larger value than they do due to optical phonons in both GaN and GaAs materials, and the MOTLWs of GaN are larger than those of GaAs for both piezoelectric and optical phonon scattering mechanisms. As small enough quantum-well-width, the piezoelectric phonon modes play an important role and they should be considered in studying the magneto optical transition properties in low-dimensional electron systems. • Influence of piezoelectric phonons on the magneto-optical transition linewidths (MOTLWs) in GaN and GaAs is studied. • MOTLWs are affected strongly by temperature, magnetic field, electron density, and well width. • MOTLWs for piezoelectric phonon are compared with those for optical phonon in both GaN and GaAs. • MOTLWs of GaN are compared with those of GaAs for both piezoelectric and optical phonons. • Influence of piezoelectric phonon on the MOTLWs is considerable and cannot be neglected.