Abstract
AbstractWe present an analysis of the optical properties of single InGaN quantum dots (QDs) grown by MOVPE. The samples were structured into mesas by focused‐ion‐beam etching and investigated by micro‐photoluminescence measurements. The QDs are characterized by the high temperature stability of their emission up to 150 K. Furthermore, the polarization of individual QD emission lines was analyzed giving an insight into their geometrical shape. Time‐resolved microphotoluminescence measurements on the excitonic and biexcitonic transition of a single quantum dot yields a radiative recombination lifetime of 2.06 ns for the exciton. The data can be fitted by a simple model for cascaded emission confirming the expected refilling of the excitonic state by biexcitonic recombination. In addition, the influence of piezoelectric fields on the exciton and biexciton emission and on their binding energy in single QDs was investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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