Influence of phosphorus diffusion modes on the formation
 of defects in an oxide

Abstract

Using optical microscopy, SEM, atomic force microscope and profilometer, the shape, size and impurity composition of local defects occurring in the silicon dioxide layer during phosphorus
 diffusion were determined. The reason for the formation of defects in the passivating oxide during phosphorus diffusion is the local melting of SiO2 in interaction with liquid drops of
 phosphoric-silicate glass. A decrease in the temperature of the phosphorus deposition process and the concentration of POCL3 in the gas stream leads to a decrease in the density of oxide
 defects.