Abstract
The properties of diamond-like carbon (DLC) are strongly affected by the amount of carbon atoms bonded in sp 2 and sp 3 electronic hybridizations. Also the amount of incorporated hydrogen and oxygen plays an important role in the final properties of DLC films. Usually, the structure and chemical composition of thin DLC films can be changed by varying the deposition parameters. Therefore, the influence of PECVD process parameters on the properties of DLC films, grown on Si substrates, was investigated in this work. Thin DLC films were deposited in a CH 4/H 2 plasma by using Ar as a gas carrier. Different ratios of gas flows were used as a variable parameter of the PECVD process. The effect of cathodic ion bombardment was also investigated. The chemical composition of DLC specimens was studied by X-ray photoelectron spectroscopy (XPS). The ratio of carbon in sp 2 and sp 3 hybridizations was determined by analyzing the first derivative of Auger C KLL spectra. These results were also confirmed by the measurements of electrical resistivity. The changes of surface morphology and microadhesion were analyzed by Atomic Force Microscopy (AFM).
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