Abstract
In-Zn-O thin-film transistors (TFTs) based on etch-stopper structure with passivation (PV) capping were fabricated. The influence of passivation deposition on TFT performance was investigated through comparing IZO-TFTs with different deposition temperature of PV. By using x-ray photoelectron spectroscopy (XPS) depth-profile and time-of-flight secondary ion mass spectrometry (SIMS) analyzing methods, we observed that oxygen vacancies and hydrogen content increase as deposition temperature of PV increases, which was the main reason leading to the negative shift of Von in IZO-TFTs when the PV layer was deposited at higher temperature. Meanwhile, we found that the stress-induced hump effect under negative bias illumination temperature (NBITS) originated from the electron traps in the back channel region of IZO, which could be passivated by the diffusing hydrogen during the PV deposition. By optimizing the deposition condition of PV, highly-stable IZO-TFTs with a PV layer deposited at 200 °C were obtained.
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