Abstract

The influence of parasitic elements on the wideband electrical noise in semiconductor lasers is investigated theoretically and experimentally. The results show that the maximum small-signal modulation bandwidth can be determined from measurements of the electrical noise spectrum. A small difference of the peak frequency in the optical intensity noise and the peak frequency in the electrical noise spectra is observed (about 200 MHz), and is explained by introducing the nonlinear intrinsic diode impedance in the parasitic model.

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