Abstract
Nip type flexible a-Si solar cells for application in building integrated photovoltaics (BIPV) were deposited by plasma enhanced chemical vapor deposition (PECVD) method. In order to improve the efficiency and stability of the device, p-type microcrystalline silicon (μc-Si:H) film was used as the window layers. H plasma treatment was applied on the p/i interface and nucleation layer was introduced to enhance the deposition of p-type μc-Si:H film on the surface of a-Si:H. Results suggest that with the application of H plasma treatment and the nucleation layer introduction, high quality p-type μc-Si:H film and high efficiency flexible solar cells were obtained.
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