Abstract
We have fabricated the epitaxial Nb-doped SrTiO3 (NbSTO) thin films on Si substrates using a TiN film as the buffer layer. The oxygen-treatment and temperature dependence of electrical properties has been investigated. Oxygen treatment showed the surface change of NbSTO films has immense influence on the resistance switching. The resistance ratio of two resistance states decreased after oxygen treatment. With tested-temperature rising, the resistance and resistance ratio of two resistance states increased. The resistance switching of Pt/NbSTO junction as a function of oxygen-treatment and temperature can be explained by the charge trapping and detrapping process in the Pt/NbSTO interface, which will help understand the resistance switching mechanism of oxides.
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