Abstract
The influence of oxygen impurities on some physical properties (optical absorption in the infrared spectral region, slope of short wavelength edge, d.c. conductivity, crystallization) of glassy GeSe2 studied. It was shown that incorporation of traces of GeO2 (UP to 1000 p.p.m. by weight of oxygen) into the glassy matrix of GeSe2 is connected with an increase of the slope of the exponential absorption edge and also with the shift of this edge to higher energies. D. c. electrical conductivity slightly decreases on doping of GeSe2 with oxygen, which probably reflects the increase of the gap. The crystallization of GeSe2 in the course of differential thermal analysis seems to be suppressed by oxygen. It is supposed that this can be connected to the interaction of GeO2 with both the homonuclear Se-Se bonds on the surface of the outrigger rafts and the Ge-Ge bonds in ethane-like units, respectively.
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