Influence of oxygen partial pressure on the strain behaviour of reactively co-sputtered Ga doped ZnO thin films

Abstract

Gallium doped ZnO films (GZO) were deposited by reactive co-sputtering of Zn and GaAs at different partial pressures of oxygen in Ar-O2 mixture. The GZO films were deposited at 375 °C, with GaAs area coverage of 0 - 3 % and 4 - 10 % O2 in sputtering atmosphere. The composition of GZO films was studied by X-ray photoelectron spectroscopy, which showed that the films deposited at 4 % and 5 % O2 display Ga/Zn ratio of ∼ 0.1 and contain oxygen vacancies, while those deposited at 6 % and 7 % O2 display Ga/Zn ratio of ∼ 0.01 and contain chemisorbed/interstitial oxygen. X-ray diffraction measurements supported by Raman studies revealed that undoped ZnO films are strongly c-axis oriented and display decrease of crystallite size along c-axis, along with substantial increase of hydrostatic tensile strain with increase of O2 percentage, which are attributed to the presence of interstitial oxygen. In sharp contrast, GZO films deposited at 4 % and 5 % O2 under limited oxygen availability, display smaller and mis-oriented crystallites along c-axis and large compressive strain, which is also hydrostatic, owing to the incorporation of Ga. The GZO films deposited at 6 % and 7 % O2 display improved crystallinity and decrease of compressive strain, which are attributed to reduced Ga content of the films and sufficient availability of oxygen during deposition. This study reveals the critical influence of the partial pressure of oxygen on the stoichiometry, doping concentration, crystallinity and the nature of strain in reactively sputtered GZO films.