Abstract
Mn1.56Co0.96Ni0.48O4 (MCNO) spinel films were obtained on Al2O3 substrates by pulsed laser deposition method. The effects of oxygen partial pressure on structural and electrical properties of MCNO thin films were investigated. According to the X-ray diffractionanalysis and the atomic force microscopy images, the oxygen partial pressure has influence on the crystallization of MCNO films. XPS spectra reveal that the oxygen partial pressure affects the proportion of the polyvalent manganese ions. By analyzing the distribution of manganese ions and the thermal potential, it was verified that the prepared MCNO films are p-type semiconductor. The resistivity of MCNO thin films grown at 600 °C is a change of U-type with the increasing of oxygen partial pressure. MCNO films with good characteristics can be deposited in the optimum oxygen partial pressure range of 5.5 × 10−3 Pa to 6.5 × 10−3 Pa, which is desirable for the favorable performance of thermistor devices.
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