Abstract
ABSTRACTWe have investigated the effect of oxygen pressure during growth (PO2) on the electronic and magnetic properties of PrAlO3 films grown on TiO2-terminated SrTiO3 substrates. The films are smooth, with flat terraces. Resistivity measurements show an increase in the sheet resistance as PO2 is increased from 10–3 to 10–4 torr, with an usual peak as a function of temperature for the sample grown in higher oxygen pressure. We measured a moderate positive magnetoresistance (MR) at low magnetic fields that evolves into a larger negative MR at high fields, for both PO2 samples. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at each of the two different interfaces.
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