Abstract
The effects of an oxygen and some metal oxide impurities introduced into the ZnS:Mn film at its postannealing process were examined with respect to the characteristics of an electroluminescent device. Depending on the oxygen pressure at the postannealing, the oxygen either decreases the emission threshold field strength in the ZnS:Mn film or forms an additional insulating film such as ZnSO4. The metal oxide impurities Fe, V, and Co caused a decrease in luminance via a killer effect on the Mn emission center. On the other hand, Ti, In, Na, and V decreased the emission threshold voltage by lowering the emission threshold field strength in the ZnS:Mn film.
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