Abstract
The influence of an oxide layer between an aluminum underelectrode and hydrogenated amorphous silicon (a-Si:H) on the characteristics of the solar cell on a polyethylene terephthalate film substrate has been examined. To obtain good cell performance, it is important to keep the oxidation state of the Al/a-Si:H interface at a low level. As an aluminium metal surface is easily oxidized in air, it is necessary to insert a metal layer such as stainless steel (SS) between the aluminium electrode and a-Si:H layer. The SS layer of less than 50 Å thickness is favourable for utilizing the high reflectance of the aluminium electrode, which enhances photo-absorption in the a-Si:H layer.
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