Abstract
A model is presented for the tunnel current–gate-voltage and high-frequency-capacitance–gate-voltage characteristics of a metal-oxide-semiconductor system with a very thin and nonuniform oxide layer. Assuming the Gaussian distribution of the oxide thickness nonuniformities, their influence on the electrical characteristics of the Al-SiO2-Si(n) system is analyzed theoretically.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.