Abstract
AbstractThe influence of low‐temperature oxidation on chemical composition, luminescent and electrical properties of a‐Si1‐xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a‐Si1‐xCx:H films fabricated by low RF power levels followed by low‐temperature oxidation (at 450 °C‐500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano‐inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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